Molecular Beam Epitaxy (MBE) Scientist/Engineer

The PEN group led by ICREA Prof. Sergio O. Valenzuela counts with about 10 members, including senior researchers, postdoctoral fellows, and PhD students. The group carries out both basic research and nanomaterial engineering for electronic nanodevices applications. Current focus is on spin physics in two-dimensional materials, including graphene, TMDCs and TIs, thermoelectricity and quantum information.


The PEN MBE cluster comprises two growth chambers and an XPS/Auger/sample prep system. The first growth chamber, which is equipped with RHEED, is dedicated to TIs and TMDCs, the second chamber, with tilting stage, is dedicated to insulating materials (MgO, EuS), and metals (Al, Ag, NiFe, Co,…). The cluster has a docking port for a UHV suitcase to transfer films to/from the ALBA synchrotron (1km away) and other in-house equipment (XPS, LEED, STM, ARPES, pulsed laser deposition cluster).


ICN2 PhD Programme


The appointed candidate will be responsible for performing epitaxial growth and characterization of semiconducting compounds and heterostructures. The compounds include topological insulators (TI) of the (Bi,Sb)2(Se,Te)3 family of materials and transition metal dichalcogenides (TMDC). S/he will carry out process development, documentation of processes and implement the necessary maintenance of growth-lab and ancillary equipment. S/he will interface with the other PEN members, focused on (electronic) devices that use the grown heterostructures, and with Laboratory Engineers that are in charge of the common facilities at the ICN2. The latter include x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), angle-resolved photoemission spectroscopy (ARPES), and scanning and transmission electron microscopy.


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Equal opportunities: ICN2 is an equal opportunity employer committed to diversity and inclusion of people with disabilities.


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